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  low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 1 jan. 2011 rev. 2. 1 general description the as393/393a consist of two independent precision voltage comparators with a typical offset voltage of 1.0mv and high gain. they are specifically designed to operate from a single power supply over wide range of voltages. operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. the as393/393a series are compatible with industry standard 393. as393a has more stringent input offset voltage than as393. the as393 is available in standard dip-8, soic-8 tssop-8 and msop-8 packag es, as393a is available in standard dip-8 and soic-8 packages. features wide supply voltage range - single supply: 2.0v to 36v - dual supplies: 1 .0v to 18v low supply current drain: 0.6ma low input bias current: 25na (typical) low input offset current: 5.0na (typical) low input offset voltage: 1.0mv (typical) input common mode voltage range includes ground differential input voltage range equals to the power supply voltage low output saturation voltage: 200mv at 4ma open collector output applications battery charger cordless telephone switching power supply dc-dc module pc motherboard communication equipment figure 1. package types of as393/393a soic-8 tssop-8 dip-8 msop-8
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 2 jan. 2011 rev. 2. 1 input 2- figure 2. pin configuration of as393/393a (top view) figure 3. functional block diagram of as393 /393a (each comparator) functional block diagram output1 input1- input1+ gnd output 2 input 2+ (soic-8/tssop-8/msop-8) v cc pin configuration +input -input q5 q6 q1 q2 q3 q4 q7 q8 output v cc m/g/mm package input 2- output1 input1- input1+ gnd output 2 input 2+ (dip-8) v cc p package 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 3 jan. 2011 rev. 2. 1 ordering information package temperature range part number marking id packing type lead free green lead free green soic-8 -40 to 85 o c as393m-e1 as393m-g1 as393m-e1 as393m-g1 tube AS393MTR-E1 as393mtr-g1 as393m-e1 as393m-g1 tape & reel as393am-e1 as393am-g1 as393am-e1 as393am-g1 tube as393amtr-e1 as393amtr-g1 as393am-e1 as393am-g1 tape & reel dip-8 -40 to 85 o c as393p-e1 as393p-g1 as393p-e1 as393p-g1 tube as393ap-e1 as393ap-g1 as393ap-e1 as393ap-g1 tube tssop-8 -40 to 85 o c as393g-e1 as393g-g1 eg3c gg3c tube as393gtr-e1 as393gtr-g1 eg3c gg3c tape & reel msop-8 -40 to 85 o c as393mm-g1 as393mm-g1 tube as393mmtr-g1 as393mm-g1 tape & reel bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. circuit type package e1: lead free g1: green as393 tr: tape and reel blank: tube m: soic-8 p: dip-8 - blank: as393 a: as393a g: tssop-8 mm: msop-8
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 4 jan. 2011 rev. 2. 1 absolute maximum ratings (note 1) parameter symbol value unit supply voltage v cc 40 v differential input voltage v id 40 v input voltage v in -0.3 to 40 v input current (v in < -0.3v) (note 2) i in 50 ma output short-circuit current to ground continuous power dissipation (t a =25 o c) p d dip-8 780 mw soic-8 660 tssop-8 570 msop-8 450 operating junction temperature t j 150 o c storage temperature t stg -65 to 150 o c lead temperature (soldering, 10 sec) t lead 260 o c parameter symbol min max unit supply voltage v cc 236v operating temperature range t a -40 85 o c recommended oper ating conditions note 1: stresses greater than those listed under "absol ute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. note 2: this input current will only exist when the voltage at any of the input leads is driven negative. it is due to the collector-base junction of the input pnp transistors becoming forward biased and thereby acting as input diode clamps. in addition to this diode action, there is also lateral npn parasitic transistor action on the ic chip. this transistor action can cause the output voltages of the comparators to go to the v+ voltage level (or to ground for a large overdrive) for the time duration that an input is dr iven negative. this is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3 v dc (at 25 o c).
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 5 jan. 2011 rev. 2. 1 electrical characteristics parameter conditions min typ max unit input offset voltage v o =1.4v, r s =0 ? , v cc =5v to 30v as393 1.0 5.0 mv 7 as393a 1.0 3.0 5 input bias current i in + or i in - with output in linear range, v cm =0v 25 250 na 400 input offset current i in +-i in -, v cm =0v 5.0 50 na 200 input common mode voltage range (note 4) v cc =30v 0 v cc -1.5 v supply current r l= v cc =5v 0.6 1.0 ma 2 v cc =30v 0.7 1.7 3 voltage gain v cc =15v, r l 15k ? , v o =1v to 11v 50 200 v/mv large signal response time v in =ttl logic swing, v ref =1.4v, v rl =5v, r l =5.1k 2 0 0 n s response time v rl =5v, r l =5.1k 1.3 s output sink current v in -=1v, v in +=0, v o =1.5v 6.0 16 ma output leackagecurrent v in -=0v, v in +=1v, v o = 5v 0.1 na v in -=0v, v in +=1v, v o = 30v 1 a saturation voltage v in -=1v, v in +=0, i sink 4ma 200 400 mv 500 thermal resistance (junction to case) dip-8 93 o c/w soic-8 138 limits in standard typeface are for t a =25 o c, bold typeface applies over t a =-40 o c to 85 o c (note 3), v cc =5v, gnd=0v, unless otherwise specified. note 3: these specifica tions are limited to -40 o c t a 85 o c. limits over temperatur e are guaranteed by design, but not tested in production. note 4: the input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3v (at 25 o c). the upper end of the common-mode voltage range is v cc -1.5v (at 25 o c), but either or both inputs can go to +36v without damages, independent of the magnitude of the v cc .
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 6 jan. 2011 rev. 2. 1 figure 4. supply voltage vs. supply current figu re 5. supply voltage vs. input bias current typical performance characteristics negative transition figure 7. response time fo r 5mv input overdrive - figure 6. output sink current vs. saturation voltage input voltage (mv) output voltage (v) 0 6 4 2 -100 0 -50 1.8 2.0 1.4 1.6 1.0 1.2 0.6 0.8 0.2 0.4 0 time ( s) 10m 100m 1 10 100 1e-3 0.01 0.1 1 10 vo-saturation voltage (v dc ) i o -output sink current (ma) 85 o c 70 o c 25 o c -40 o c 0 5 10 15 20 25 30 35 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 supply current (ma) supply voltage (v) ta=-40 o c ta=0 o c ta=25 o c ta=70 o c ta=85 o c 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 10 20 30 40 50 60 70 80 90 100 input bias current (na) supply voltage (v) -40 o c 0 o c 25 o c 70 o c 85 o c v in v cc 5.1k v out + _
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 7 jan. 2011 rev. 2. 1 typical performance characteristics (continued) figure 8. response time fo r 5mv input overdrive - positive transition time ( s) input voltage (mv) output voltage (v) 0 5 0 100 1.8 2.0 1.4 1.6 1.0 1.2 0.6 0.8 0.2 0.4 0 figure 9. basic comparator typical applications figure 10. driving cmos +v in +v ref 1/2 as393/a v cc 3k v o + - 100k 5v + - 4 8 1/2 as393/a +v in +v ref v o v in v cc 5.1k v out + _
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 8 jan. 2011 rev. 2. 1 figure 11. one shot multivibrator figure 12. squarewave oscillator typical applicat ions (continued) 1m 1m 1m v cc v o 10k - + +v in 100pf 0.001 f 1/2 as393/a 100k 75pf 100k v cc 4.3k v o 100k 100k - + v in 1/2 as393/a
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 9 jan. 2011 rev. 2. 1 mechanical dimensions dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ note: eject hole, oriented hole and mold mark is optional.
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 10 jan. 2011 rev. 2. 1 mechanical dimens ions (continued) soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 11 jan. 2011 rev. 2. 1 mechanical dimens ions (continued) tssop-8 unit: mm(inch) 4.300(0.169) 0.400(0.016) 0.190(0.007) 0.300(0.012) see detail a detail a 2.900(0.114) 0.050(0.002) 0.150(0.006) 1.200(0.047) max 1.950(0.077) 0 8 12 top & bottom r0.090(0.004) 0.450(0.018) 0.750(0.030) 1.000(0.039) 6.400(0.252) 0.800(0.031) 1.050(0.041) 0.090(0.004) 0.200(0.008) gage plane seating plane 0.250(0.010) 3.100(0.122) 4.500(0.177) typ 0.650(0.026) typ typ typ r0.090(0.004) ref note: eject hole, oriented hole and mold mark is optional.
low power low offset voltage dual comparators as393/393a bcd semiconductor manufacturing limited data sheet 12 jan. 2011 rev. 2. 1 mechanical dimens ions (continued) msop-8 unit: mm(inch) 4.700(0.185) 0.650(0.026)typ 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 0.300(0.012)typ 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 ) 0 . 8 0 0 ( 0 . 0 3 1 ) 1 . 2 0 0 ( 0 . 0 4 7 ) 3.100(0.122) 2.900(0.114) 0 6 0 . 1 5 0 ( 0 . 0 0 6 ) t y p 0 . 7 6 0 ( 0 . 0 3 0 ) 0 . 9 7 0 ( 0 . 0 3 8 ) ` note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited


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